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1N5711 데이터 시트보기 (PDF) - HP => Agilent Technologies

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1N5711 Schottky Barrier Diodes for General Purpose Applications HP
HP => Agilent Technologies HP
1N5711 Datasheet PDF : 6 Pages
1 2 3 4 5 6
5
Typical Parameters, continued
100
100,000
100
150
10,000
10
100
1.0
0.1
0.01
0
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
0.2 0.4 0.6 0.8 1.0 1.2
1000
100
10
50
25
TA = °C
1
0 5 10 15 20 25 30
VF - FORWARD VOLTAGE (V)
Figure 10. I-V Curve Showing Typical
Temperature Variation for the 5082-2811
Schottky Diode.
VR - REVERSE VOLTAGE (V)
Figure 11. (5082-2811) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
10
1.0
+150°C
+100°C
+50°C
0.1
+25°C
0°C
–50°C
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
VF - FORWARD VOLTAGE (V)
Figure 12. I-V Curve Showing Typical
Temperature Variations for 5082-2835
Schottky Diode.
100,000
11.4
10,000
1000
100
10
+150°C
+125°C
+100°C
+75°C
+50°C
+25°C
1.2
1.0
0.8
5082-2810/2811
IN5712
0.6
5082-2835
0.4
0.2
1
01
2
3
4
5
6
VR - REVERSE VOLTAGE (V)
Figure 13. (5082-2835) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
0
0
2
4
6
8
10
VR - REVERSE VOLTAGE (V)
Figure 14. Typical Capacitance (CT) vs.
Reverse Voltage (VR).
1000
5082-2800, 1N5711
100
5082-2811
5082-2811
1N5712
10
5082-2835
1
0
2
4
6
8
10
IF - FORWARD CURRENT (mA)
Figure 15. Typical Dynamic Resistance
(RD) vs. Forward Current (IF).
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