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1N5711 데이터 시트보기 (PDF) - HP => Agilent Technologies

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1N5711 Schottky Barrier Diodes for General Purpose Applications HP
HP => Agilent Technologies HP
1N5711 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2
Package Characteristics
Outline 15
Lead Material ........................................................................................ Dumet
Lead Finish .............................................................................. 95-5% Tin-Lead
Max. Soldering Temperature ................................................ 260°C for 5 sec
Min. Lead Strength .................................................................... 4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ................................................................................ 2.0 nH
2800 Series: ........................................................................................ 2.0 nH
2300 Series, 2900: .............................................................................. 3.0 nH
Typical Package Capacitance
1N5711, 1N5712: ................................................................................ 0.2 pF
2800 Series: ........................................................................................ 0.2 pF
2300 Series, 2900: ............................................................................ 0.07 pF
The leads on the Outline 15 package should be restricted so that the
bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel
specification is patterned after RS-296-D.
Electrical Specifications at TA = 25°C
General Purpose Diodes
Part
Number
5082-2800
Package
Outline
15
Min.
Breakdown
Voltage
VBR (V)
70
Max.
Forward
Voltage
VF (mV)
410
VF = 1 V Max.
at Forward
Current
IF (mA)
15
Max.
Reverse Leakage
Current
IR (nA) at VR (V)
200
50
Max.
Capaci-
tance
CT (pF)
2.0
1N5711
15
70
410
15
200
50
2.0
5082-2810
15
20
410
35
100
15
1.2
1N5712
15
20
550
35
150
16
1.2
5082-2811
15
15
410
20
100
8
1.2
5082-2835
15
8*
340
10*
100
1
1.0
Test
Conditions
IR = 10 µA
*IR = 100 µA
IF = 1 mA
*VF = 0.45 V
VR = 0 V
f =1.0 MHz
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835
which is measured at 20 mA.
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