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UF1006F View Datasheet(PDF) - Won-Top Electronics

Part Name
Description
Manufacturer
UF1006F Datasheet PDF : 3 Pages
1 2 3
WTE
POWER SEMICONDUCTORS
UF1000F – UF1008F
10A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER
Features
! Glass Passivated Die Construction
B
! Ultra-Fast Switching
! High Current Capability
C
! Low Reverse Leakage Current
! High Surge Current Capability
G
A
! Plastic Material has UL Flammability
Classification 94V-O
PIN1
2
D
Mechanical Data
! Case: ITO-220A Full Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 2.24 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
F
E
P
I
L
H
J
K
ITO-220A
Dim
Min
Max
A
14.9
15.1
B
10.5
C
2.62
2.87
D
3.56
4.06
E
13.46
14.22
F
0.68
0.94
G
3.74Ø
3.91Ø
H
5.84
6.86
I
4.44
4.70
J
2.54
2.79
K
0.35
0.64
L
1.14
1.40
P
4.95
5.20
All Dimensions in mm
PIN 1 +
PIN 2 -
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
VRRM
VRWM
VR
UF
1000F
50
UF
1001F
100
UF
1002F
200
UF
1003F
300
UF
1004F
400
UF
1006F
600
UF
1008F
Unit
800 V
VR(RMS)
35
70
140 210 280 420 560 V
Average Rectified Output Current @TC = 100°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
(JEDEC Method)
Forward Voltage
@IF = 10A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
Operating and Storage Temperature Range
Tj, TSTG
10
150
1.0
1.3
10
500
50
80
-65 to +150
A
A
1.7
V
µA
100
nS
50
pF
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
UF1000F – UF1008F
1 of 3
© 2002 Won-Top Electronics
 

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