CD40257BMS View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
CD40257BMS Datasheet PDF : 8 Pages
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Specifications CD40257BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance
θja
Ceramic DIP and FRIT Package . . . . . 80oC/W
θjc
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
CONDITIONS (NOTE 1)
IDD VDD = 20V, VIN = VDD or GND
Input Leakage Current
VDD = 18V, VIN = VDD or GND
IIL VIN = VDD or GND VDD = 20
GROUP A
SUBGROUPS
1
2
3
1
TEMPERATURE
+25oC
+125oC
-55oC
+25oC
LIMITS
MIN MAX
-
2
-
200
-
2
-100
-
UNITS
µA
µA
µA
nA
2
+125oC
-1000 -
nA
VDD = 18V
3
Input Leakage Current
IIH VIN = VDD or GND VDD = 20
1
2
VDD = 18V
3
-55oC
+25oC
+125oC
-55oC
-100
-
nA
-
100 nA
- 1000 nA
-
100 nA
Output Voltage
VOL15 VDD = 15V, No Load
1, 2, 3
+25oC, +125oC, -55oC -
50 mV
Output Voltage
VOH15 VDD = 15V, No Load (Note 3)
1, 2, 3
+25oC, +125oC, -55oC 14.95
-
V
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
IOL5
IOL10
IOL15
IOH5A
IOH5B
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
1
+25oC
0.53
-
mA
1
+25oC
1.4
-
mA
1
+25oC
3.5
-
mA
1
+25oC
- -0.53 mA
1
+25oC
-
-1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
1
+25oC
-
-1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V
1
N Threshold Voltage
VNTH VDD = 10V, ISS = -10µA
1
P Threshold Voltage
VPTH VSS = 0V, IDD = 10µA
1
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
VDD = 20V, VIN = VDD or GND
7
+25oC
+25oC
+25oC
+25oC
+25oC
-
-3.5 mA
-2.8 -0.7 V
0.7 2.8
V
VOH > VOL < V
VDD/2 VDD/2
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
Input Voltage Low
(Note 2)
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC -
1.5
V
Input Voltage High
(Note 2)
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5
-
V
Input Voltage Low
(Note 2)
VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC -
4
V
Input Voltage High
(Note 2)
Tri-State Output
Leakage
Tri-State Output
Leakage
VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 11
-
V
IOZL VIN = VDD or GND VDD = 20V
1
VOUT = 0V
2
VDD = 18V
3
IOZH VIN = VDD or GND VDD = 20V
1
VOUT = VDD
2
VDD = 18V
3
+25oC
+125oC
-55oC
+25oC
+125oC
-55oC
-0.4
-
µA
-12
-
µA
-0.4
-
µA
-
0.4 µA
-
12 µA
-
0.4 µA
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs.
7-1443
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