D2212UK View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

Manufacturer

D2212UK

METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

D2212UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

Drain–Source

BVDSS Breakdown Voltage

VGS = 0

ID = 10mA

40

IDSS

Zero Gate Voltage

Drain Current

VDS = 12.5V

VGS = 0

IGSS Gate Leakage Current

VGS(th) Gate Threshold Voltage*

gfs

Forward Transconductance*

GPS Common Source Power Gain

η

Drain Efficiency

VSWR Load Mismatch Tolerance

VGS = 20V

ID = 10mA

VDS = 10V

PO = 10W

VDS = 12.5V

f = 1GHz

VDS = 0

VDS = VGS

ID = 0.2A

IDQ = 0.8A

0.5

0.72

10

40

20:1

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 0

VGS = –5V f = 1MHz

VDS = 12.5V VGS = 0 f = 1MHz

VDS = 12.5V VGS = 0 f = 1MHz

Typ.

Max. Unit

V

1

mA

1

µA

7

V

S

dB

%

—

48

pF

40

pF

4

pF

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

RTHj–case

Thermal Resistance Junction – Case

Max. 4.2°C / W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 12/00

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