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IRF1302L View Datasheet(PDF) - International Rectifier

Part NameIRF1302L IR
International Rectifier IR
DescriptionAUTOMOTIVE MOSFET
IRF1302L Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
PD - 94520
AUTOMOTIVE MOSFET
IRF1302S
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
IRF1302L
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 4.0m
ID = 174A†
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
D2Pak
IRF1302S
TO-262
IRF1302L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
174†
120†
700
200
1.4
± 20
350
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
Typ.
–––
–––
Max.
0.74
40
Units
°C/W
www.irf.com
1
07/16/02
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