IRL3103D2 View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRL3103D2 Datasheet PDF : 6 Pages
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PD 9.1660
IRL3103D2
PRELIMINARY
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Copackaged HEXFET® Power MOSFET
D
and Schottky Diode
l Generation 5 Technology
VDSS = 30V
l Logic Level Gate Drive
l Minimize Circuit Inductance
l Ideal For Synchronous Regulator Application G
RDS(on) = 0.014Ω
ID = 54A
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
54
34
220
2.0
70
0.56
± 16
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.8
62
Units
°C/W
7/16/97
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