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Part Name
Description
STD20N03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD20N03L
N - CHANNEL ENHANCEMENT MODE ”SINGLE FEATURE SIZE” POWER MOSFET
STMicroelectronics
STD20N03L Datasheet PDF : 9 Pages
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STD20NE03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
S ymb ol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
P a ra m et er
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 15 V
R
G
=4.7
Ω
V
DD
= 24 V
I
D
= 20 A
V
GS
= 5 V
I
D
= 40 A V
GS
= 5 V
Min.
Typ .
25
160
29
12
14
Max.
33
210
38
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
t
r(Vo f f)
t
f
t
c
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 24 V
R
G
=4.7
Ω
I
D
= 40 A
V
GS
= 5 V
Min.
Typ .
25
120
155
Max.
33
160
210
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I
SD
I
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
V
SD
(
∗
) Forward On Voltage
I
SD
= 20 A V
GS
= 0
t
rr
Reverse Recovery
Time
Q
rr
Reverse Recovery
I
SD
= 40 A
V
DD
= 20 V
Charge
I
RRM
Reverse Recovery
Current
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
di/dt = 100 A/
µ
s
T
j
= 150
o
C
Min.
Typ .
Max.
20
100
Unit
A
A
1.5
V
50
ns
0.9
µ
C
3.5
A
Safe Operating Area
Thermal Impedance
3/9
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