SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
ᴌLow Noise.
: NF=3dB(Typ.), Rg=100ή, VCE=-6V, IC=-100ỌA, f=1kHz
: NF=0.5dB(Typ.), Rg=1kή, VCE=-6V, IC=-100ỌA, f=1kHz.
ᴌHigh DC Current Gain : hFE=200ᴕ700.
ᴌHigh Voltage : VCEO=-120V.
ᴌLow Pulse Noise. Low 1/f Noise.
ᴌComplementary to KTC3200.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
-120
-120
-5
-100
100
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
KTA1268
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE(Note)
VCE(sat)
VBE
fT
Cob
VCB=-120V, IE=0
VEB=-5V, IC=0
IC=-1mA, IB=0
VCE=-6V, IC=-2mA
IC=-10mA, IB=-1mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
Noise Figure
VCE=-6V, IC=-100ỌA, f=10Hz, Rg=10kή
NF
VCE=-6V, IC=-100ỌA, f=1kHz, Rg=10kή
VCE=-6V, IC=-100ỌA f=1kHz, Rg=100ή
Note : hFE Classification GR:200ᴕ400, BL:350ᴕ700
MIN.
-
-
-120
200
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-0.65
100
4.0
-
-
3.0
MAX.
-100
-100
-
700
-0.3
-
-
-
6.0
2.0
-
UNIT
nA
nA
V
V
V
MHz
pF
dB
1994. 3. 22
Revision No : 0
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