PZTA63 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

PZTA63

PNP Darlington Transistor

Fairchild Semiconductor 

MPSA63 / MMBTA63 / PZTA63

PNP Darlington Transistor

August 2010

Features

• This device is designed for applications requiring extremely high current gain at currents to 800 mA.

• Sourced from Process 61.

MPSA63

EBC

TO-92

MMBTA63

C

SOT-23

Mark:2U

E

B

PZTA63

C

SOT-223

E

C

B

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage

-30

V

VCBO

Collector-Base Voltage

-30

V

VEBO

Emitter-Base Voltage

-10

V

IC

Collector Current - Continuous

-1.2

A

TJ, Tstg Operating and Storage Junction Temperature Range

- 55 to +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics Ta = 25°C unless otherwise noted

Symbol

Parameter

MPSA63

Max.

*MMBTA63

**PZTA63

PD

Total Device Dissipation

Derate above 25°C

625

350

1,000

5.0

2.8

8.0

RθJC

Thermal Resistance, Junction to Case

83.3

RθJA

Thermal Resistance, Junction to Ambient

200

357

125

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.

Units

mW

mW/°C

°C/W

°C/W

© 2010 Fairchild Semiconductor Corporation

MPSA63 / MMBTA63 / PZTA63 Rev. A1

1

www.fairchildsemi.com

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