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BDX53C View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
BDX53C Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium−Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
VCEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
VCB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53C, BDX54C
Vdc
80
100
Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak
VEB
5.0
Vdc
IC
8.0
Adc
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
IB
PD
TJ, Tstg
0.2
65
0.48
−65 to +150
Adc
W
W/°C
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient RqJA
70
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
RqJC
1.92
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
1
2
3
TO−220AB
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
1
3
Base 2 Emitter
Collector
BDX5xy
A
Y
WW
G
= Device Code
x = 3 or 4
y = B or C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 12
Publication Order Number:
BDX53B/D
 

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