4N39
Photo SCR Optocoupler
FEATURES
• Turn On Current (IFT), 5.0 mA Typical
• Gate Trigger Current (IGT), 20 mA
• Surge Anode Current, 10 Amp
• Blocking Voltage, 200 VACPK
• Gate Trigger Voltage (VGT), 0.6 Volt
• Isolation Voltage, 5300 VRMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
•
V
DE
VDE Approval #0884 Available with
Option 1
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be
used in SCR triac and solid state relay applica-
tions where high blocking voltages and low input
current sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................... 6.0 V
Peak Forward Current
(100 µs, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C......................... 100 mW
Derate Linearly from 50°C ..................... 2.0 mW/°C
Detector
Reverse Gate Voltage..................................... 6.0 V
Anode Peak Blocking Voltage ...................... 200 V
Peak Reverse Gate Voltage............................ 6.0 V
Anode Current ............................................ 300 mA
Surge Anode Current (100 µs duration) .......... 10 A
Surge Gate Current (5.0 ms duration)........ 100 mA
Power Dissipation, 25°C ambient.............. 400 mW
Derate Linearly from 25°C ..................... 8.0 mW/°C
Package
Isolation Test Voltage (1.0 sec.)............. 5300 VRMS
Isolation Resistance
VIO=500 V, TA=25°C................................≥1012 Ω
VIO=500 V, TA=100°C..............................≥1011 Ω
Total Package Dissipation ......................... 450 mW
Derate Linearly from 50°C ..................... 9.0 mW/°C
Operating Temperature ............... –55°C to +100°C
Storage Temperature................... –55°C to +150°C
Soldering Temperature (10 s.).......................260°C
Dimensions in Inches (mm)
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
321
pin one ID
Anode 1
Cathode 2
4 56
.335 (8.50)
.343 (8.70)
NC 3
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
6 Gate
5 Anode
4 Cathode
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Characteristics TA=25°C
Parameters
Sym.
Emitter
Forward Voltage
VF
Reverse Current
IR
Detector
Forward Blocking
Voltage
VDM
Reverse Blocking
Voltage
VRM
On-state Voltage
VTM
Holding Current
IH
Gate Trigger
VGT
Voltage
Forward Leakage
Current
IDM
Reverse Leakage IRM
Current
Package
Turn-0n Current
IFT
Isolation
—
Capacitance
Min. Typ. Max. Unit
— 1.2 1.5 V
— — 10 µA
200 — — V
200 — — V
— — 1.2 V
— — 200 µA
— 0.6 1.0 V
— — 50 µA
— — 50 µA
— 15 30 mA
— 8.0 14 —
— 2.0 — pF
Condition
IF=20 mA
VR=5.0 V
RGK=10 kΩ
TA=100°C
Id=150 µA
ITM=300 mA
RGK=27 kΩ
VFX=50 V
VFX=100 V
RGK=27 kΩ
RL=10 KΩ
RGK=10 kΩ
VRX=200 V
IF=0,
TA=100°C
RGK=27 kΩ
VRX=200 V
IF=0,
TA=100°C
VFX=50 V
RGK=10 kΩ
VFX=100 V
RGK=27 kΩ
f=1.0 MHz
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
4N39
May 30, 2000-10