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J495 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
J495 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 30 mMAX. (VGS = –10 V, ID = –15 A)
RDS(on)2 = 56 mMAX. (VGS = –4 V, ID = –15 A)
• Low Ciss Ciss = 4120 pF TYP.
• Built-in Gate Protection Diode
PACKAGE DIMENSIONS
(in millimeter)
10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2
2.7 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–60
V
Gate to Source Voltage*
VGSS(AC)
m20
V
Gate to Source Voltage
VGSS(DC) –20, 0
V
Drain Current (DC)
ID(DC)
m30
A
Drain Current (pulse)**
ID(pulse)
m120
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
*f = 20 kHz, Duty Cycle 10% (+Side)
**PW 10 µs, Duty Cycle 1%
0.7 ± 0.1
2.54
1.3 ± 0.2
1.5 ± 0.2
2.54
2.5 ± 0.1
0.65 ± 0.1
1. Gate
2. Drain
3. Source
1 23
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-A)
3.57
62.5
°C/W
°C/W
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice
acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D11267EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan
©
1997
 

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