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J492 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
J492 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SJ492
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –10 A
RDS(on)2 VGS = –4 V, ID = –10 A
Gate to Source Cut-off Voltage
VGS(off) VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –10 A
Drain Leakage Current
IDSS
VDS = –60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = # 20 V, VDS = 0 V
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
ID = –10 A
Rise Time
tr
VGS(on) = –10 V
Turn-off Delay Time
td(off)
VDD = –30 V
Fall Time
tf
RG = 10
Total Gate Charge
QG
ID = –20 A
Gate to Source Charge
QGS
VDD = –48 V
Gate to Drain Charge
QGD
VGS = –10 V
Body Diode Forward Voltage
VF(S-D) IF = –20 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = –20 A, VGS = 0 V
Qrr
di/dt = 50 A / µs
MIN. TYP. MAX. UNIT
70 100 m
120 185 m
–1.0 –1.5 –2.0 V
5.0 12
S
–10 µA
# 10 µA
1210
pF
520
pF
180
pF
16
ns
140
ns
90
ns
80
ns
42
nC
8.0
nC
10
nC
1.0
V
125
ns
280
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
L
PG
50
VDD
VGS = –20 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID
90 %
ID
ID
0 10 %
Wave Form
90 %
90 %
10 %
td(on)
tr td(off)
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D11264EJ1V0DS00
 

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