FDZ208P(2002) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDZ208P Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA
–30
∆BV DSS
∆TJ
Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C
Coefficient
IDSS
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V
IGSSF
Gate–Body Leakage Current,
Forward
VGS = –25 V, VDS = 0 V
IGSSR
Gate–Body Leakage Current,
Reverse
VGS = 25 V, VDS = 0 V
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
∆VGS(th) Gate Threshold Voltage
∆TJ
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
–1
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –12.5 A
VGS = –4.5 V, ID = –9.5 A
VGS = –10 V,ID = –12.5A,TJ=125°C
VGS = –10 V, VDS = –5 V
–30
VDS = –10 V, ID = –12.5 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
VDS = –15 V, ID = –12.5 A,
VGS = –5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –1.8 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 12.5 A,
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
V
–20
mV/°C
–1 µA
–100 nA
100 nA
–1.5 –3
V
5
mV/°C
9 10.5 mΩ
13 16.5
11.7 15
A
40
S
2409
pF
614
pF
300
pF
13 24 ns
11 21 ns
74 119 ns
42 68 ns
25 35 nC
5
nC
10
nC
–1.8 A
–0.7 –1.2 V
29.5
nS
30.2
nC
Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the
junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of
the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a) 56°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 119°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ208P Rev. C (W)
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