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4N25GV View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
4N25GV
Vishay
Vishay Semiconductors Vishay
4N25GV Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Switching Characteristics of 4N25(G)V
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
W VS = 5 V, IC = 5 mA, RL = 100 (see figure 3)
W VS = 5 V, IF = 10 mA, RL = 1 k (see figure 4)
Switching Characteristics of 4N35(G)V
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
W VS = 5 V, IC = 2 mA, RL = 100 (see figure 3)
W VS = 5 V, IF = 10 mA, RL = 1 k (see figure 4)
Symbol Typ.
Unit
td
tr
tf
ts
ton
toff
ton
toff
4.0
7.0
6.7
0.3
11.0
7.0
25.0
42.5
ms
ms
ms
ms
ms
ms
ms
ms
Symbol Typ.
Unit
td
tr
tf
ts
ton
toff
ton
toff
2.5
3.0
4.2
0.3
<10.0
<10.0
9.0
25.0
ms
ms
ms
ms
ms
ms
ms
ms
IF IF
+5V
0
IC = 5 mA/ 2 mA;
RG = 50 W
Adjusted through
input amplitude
IF
+tp
T
0.01
m tp = 50 s
0
tp
Channel I
Oscilloscope
W Channel II RL 1 M
50 W
100 W
CL 20 pF
14950
IC
100%
90%
96 11698
t
Figure 3. Test circuit, non-saturated operation
IF
0
RG = 50 W
+tp
T
0.01
m tp = 50 s
IF = 10 mA
95 10844
50 W
1 kW
+5V
IC
Channel I
Channel II
Oscilloscope
RL 1 MW
CL 20 pF
Figure 4. Test circuit, saturated operation
10%
0
tr
td
t
ts
tf
ton
tp
tion
td
tr
ton (= td + tr)
pulse dura-
delay time
rise time
turn-on time
toff
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
Figure 5. Switching times
90
Rev. A4, 11–Jan–99
 

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