PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
140V/12A AF 60W Output Applications
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of fT on current and excellent
high frequency responce.
The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
60 D 120 100 E 200
SANYO : TO-3PB
–40 to +150 ˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4