BDX53 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BDX53 Datasheet PDF : 4 Pages
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BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
NPN Epitaxial Silicon Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
VCEO
Collector-Emitter Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDX53
: BDX53A
: BDX53B
: BDX53C
Test Condition
IC = 100mA, IB = 0
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
VF
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 22V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 3A, IB = 12mA
IF= 3A
IF= 8A
Value
45
60
80
100
45
60
80
100
5
8
12
0.2
60
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Min. Typ. Max. Units
45
V
60
V
80
V
100
V
200 µA
200 µA
200 µA
200 µA
500 µA
500 µA
500 µA
500 µA
2
mA
750
2
V
2.5
V
1.8 2.5
V
2.5
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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