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KTD718O View Datasheet(PDF) - KEC

Part Name
Description
Manufacturer
KTD718O Datasheet PDF : 0 Pages
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 4550W Audio Frequency
Amplifier Output Stage.
Complementary to KTB688.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
120
120
5
10
1
80
150
-55150
UNIT
V
V
V
A
A
W
KTD718
TRIPLE DIFFUSED NPN TRANSISTOR
A
Q
B
K
D
d
PP
T
1 23
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
15.9 MAX
B
4.8 MAX
C
20.0+_ 0.3
D
2.0+_ 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
MJ
2.0
K
1.8 MAX
L
20.5+_ 0.5
M
2.8
P
5.45+_ 0.2
Q
Φ3.2+_ 0.2
T
0.6+0.3/-0.1
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification R:55110, O:80160
TEST CONDITION
VCB=120V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
VCE=5V, IC=1A
IC=6A, IB=0.6A
VCE=5V, IC=5A
VCE=5V, IC=1A
VCB=10V, IE=0, f=1MHz
MIN.
-
-
120
55
-
-
-
-
TYP.
-
-
-
-
-
-
12
170
MAX.
10
10
-
160
2.0
1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
1997. 1. 25
Revision No : 0
1/2
 

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