BDX36 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BDX36 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN switching transistors
Product specification
BDX35; BDX36; BDX37
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BDX35
BDX36; BDX37
collector-emitter voltage
BDX35; BDX36
BDX37
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb ≤ 75 °C
Tamb ≤ 25 °C
MIN. MAX. UNIT
−
100
V
−
120
V
−
60
V
−
75
V
−
5
V
−
5
A
−
10
A
−
2
A
−
15
W
−
1.25 W
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
in free air
thermal resistance from junction to mounting base
VALUE
100
5
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICBO
IEBO
hFE
VCEsat
VCEsat
collector cut-off current
BDX35
collector cut-off current
IE = 0; VCB = 80 V
IE = 0; VCB = 80 V; Tj = 100 °C
BDX36; BDX37
emitter cut-off current
DC current gain
BDX35; BDX36
IE = 0; VCB = 100 V
IE = 0; VCB = 100 V; Tj = 100 °C
IC = 0; VEB = 5 V
IC = 0.5 A; VCE = 10 V; see Fig.2
BDX37
collector-emitter saturation voltage IC = 5 A; IB = 0.5 A
collector-emitter saturation voltage
BDX35; BDX37
BDX36
IC = 7 A; IB = 0.7 A
IC = 10 A; IB = 1 A
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
10 µA
−
−
100 nA
−
−
10 µA
−
−
100 nA
45 130 450
45 80 450
−
−
900 mV
−
−
1.2 V
−
−
2
V
1997 Apr 16
3
|
|
Share Link: 