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D1055 Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de piezacomponentes DescripciónFabricante
D1055 Medium Power Transistor (32V, 0.8A) ROHM
ROHM Semiconductor ROHM
D1055 Datasheet PDF : 4 Pages
1 2 3 4
Transistors
2SD1781K
Medium Power Transistor (32V, 0.8A)
2SD1781K
zFeatures
1) Very Low VCE(sat).
VCE(sat) = 0.1V(Typ.)
̈́IC / IB= 500УA / 50mAͅ
2) High current capacity in compact package.
3) Complements the 2SB1197K.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1+−00..12
0.8±0.1
0~0.1
ROHM : SMT3
EIAJ : SC-59
Denotes hFE
(3)
0.4
+0.1
0.05
All terminals have
same dimensions
0.15−+00..016
Abbreviated symbol : AF
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage temperature
Single pulse Pw=100ms
Tstg
Limits
40
32
5
0.8
1.5
200
150
55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
mW
°C
°C
Rev.A
1/3
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