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IRFI640G Datasheet

Part NameDescriptionManufacturer
IRFI640G HEXFET® Power MOSFETs IR
International Rectifier IR
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DESCRIPTION
Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS
• Sink to Lead Creepage Dist. = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance

 

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