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GS881E18BD-2002 Datasheet

Part Name
Description
MFG CO.
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Functional Description
Applications
The GS881E18B(T/D)/GS881E32B(D)/GS881E36B(T/D) is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features
• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA packages

 

Part Name
Description
PDF
MFG CO.
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM
White Electronic Designs Corporation
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
Cypress Semiconductor
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
Cypress Semiconductor
256K x 36 and 512K x 18 Bit ZBT® Fast Static RAM
Motorola => Freescale
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
Cypress Semiconductor
128K x 36 and 256K x 18 Bit Flow–Through ZBT™ RAM Synchronous Fast Static RAM
Motorola => Freescale
128K x 36 and 256K x 18 Bit Pipelined ZBT™ RAM Synchronous Fast Static RAM
Motorola => Freescale
4M-BIT [512K x 8/256K x 16] MASK ROM
Macronix International
256K x 36/256K x 32/512K x 18 Pipelined SRAM
Cypress Semiconductor
256K x 32, 256K x 36 and 512K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM
Integrated Silicon Solution

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