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GS816273CC Datasheet

Part NameDescriptionManufacturer
GS816273CC 256K x 72 18Mb S/DCD Sync Burst SRAMs GSI
Giga Semiconductor GSI
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Functional Description
Applications
The GS816273CC is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 3.3 V or 2.5 V core power supply
• 3.3 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 209-bump BGA package
• RoHS-compliant 209-bump BGA package available

 

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