BM29F040 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

BM29F040

FLASH MEMORY CMOS 4M (512K ×8) BIT

Fujitsu 

MBM29F040C-55/-70/-90

s DC CHARACTERISTICS

Parameter

Symbol

Parameter Description

Test Conditions

Min.

Max. Unit

ILI

Input Leakage Current

ILO

Output Leakage Current

VIN = VSS to VCC, VCC = VCC Max

—

VOUT = VSS to VCC, VCC = VCC Max

—

±1.0

µA

±1.0

µA

ILIT

A9, OE Input Leakage Current VCC = VCC Max., A9, OE = 12.0 V

—

50

µA

ICC1

VCC Active Current (Note 1)

CE = VIL, OE = VIH

ICC2

VCC Active Current (Note 2)

CE = VIL, OE = VIH

—

30

mA

—

45

mA

ICC3

VCC Current (Standby)

VIL

Input Low Level

VCC = VCC Max., CE = VIH

VCC = VCC Max., CE = VCC±0.3 V

—

—

—

–0.5

1

mA

5

µA

0.8

V

VIH

Input High Level

—

2.0

VCC+0.3

V

VID

Voltage for Autoselect and Sector

Protection (A9, OE) (Note 3, 4)

VCC = 5.0 V

11.5

12.5

V

VOL

VOH1

VOH2

Output Low Voltage Level

Output High Voltage Level

IOL = 12.0 mA, VCC = VCC Min

—

0.45

V

IOH = –2.5 mA, VCC = VCC Min

2.4

—

V

IOH = –100 µA

VCC–0.4

—

V

VLKO

Low VCC Lock-Out Voltage

—

3.2

4.2

V

Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component

(at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH.

2. ICC active while Embedded Algorithm (program or erase) is in progress.

3. Applicable to sector protection function.

4. (VID – VCC) do not exceed 9 V.

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