M1A3P400-2PQG208YES View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

Manufacturer

M1A3P400-2PQG208YES

(A3Pxxx) ProASIC3 Flash Family FPGAs with Optional Soft ARM Support

Microsemi Corporation 

ProASIC3 DC and Switching Characteristics

Internal Power-Up Activation Sequence

1. Core

2. Input buffers

Output buffers, after 200 ns delay from input buffer activation

VCC

VCC = 1.575 V

VCC = 1.425 V

Activation trip point:

Va = 0.85 V ± 0.25 V

Deactivation trip point:

Vd = 0.75 V ± 0.25 V

VCC = VCCI + VT

where VT can be from 0.58 V to 0.9 V (typically 0.75 V)

Region 1: I/O Buffers are OFF

Region 4: I/O

buffers are ON.

I/Os are functional

(except differential

but slower because VCCI

is below specification. For the

same reason, input buffers do not

meet VIH / VIL levels, and output

buffers do not meet VOH / VOL levels.

Region 5: I/O buffers are ON

and power supplies are within

specification.

I/Os meet the entire datasheet

and timer specifications for

speed, VIH / VIL, VOH / VOL,

etc.

Region 2: I/O buffers are ON.

I/Os are functional (except differential inputs)

but slower because VCCI / VCC are below

specification. For the same reason, input

buffers do not meet VIH / VIL levels, and

output buffers do not meet VOH / VOL levels.

Region 3: I/O buffers are ON.

I/Os are functional; I/O DC

specifications are met,

but I/Os are slower because

the VCC is below specification.

Region 1: I/O buffers are OFF

Activation trip point:

Va = 0.9 V ± 0.3 V

Deactivation trip point:

Vd = 0.8 V ± 0.3 V

Min VCCI datasheet specification

voltage at a selected I/O

standard; i.e., 1.425 V or 1.7 V

or 2.3 V or 3.0 V

Figure 2-1 • I/O State as a Function of VCCI and VCC Voltage Levels

VCCI

Thermal Characteristics

Introduction

The temperature variable in the Microsemi Designer software refers to the junction temperature, not the

ambient temperature. This is an important distinction because dynamic and static power consumption

cause the chip junction to be higher than the ambient temperature.

EQ 1 can be used to calculate junction temperature.

TJ = Junction Temperature = T + TA

EQ 1

where:

TA = Ambient Temperature

T = Temperature gradient between junction (silicon) and ambient T = ja * P

ja = Junction-to-ambient of the package. ja numbers are located in Table 2-5.

P = Power dissipation

2-4

Revision 13

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