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MCL4151
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 50 mA
VR = 50 V
VR = 50 V, Tj = 150 °C
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
VR = 0 V, f = 1 MHz,
VHF = 50 mV
IF = IR = 10 mA,
iR = 1 mA
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
VF
IR
IR
V(BR)
CD
trr
0.880
75
MAX.
1
50
50
2
4
2
UNIT
V
nA
μA
V
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
3.0
Scattering Limit
2.5
10
2.0
f = 1 MHz
Tj = 25 °C
1
1.5
0.1
0.01
0
94 9151
VR = 50 V
40
80
120 160 200
Tj - Junction Temperature (°C)
1.0
0.5
0
0.1
1
10
100
94 9153
VR - Reverse Voltage (V)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 3 - Diode Capacitance vs. Reverse Voltage
1000
100
Tj = 100 °C
10
Tj = 25 °C
1
0.71
1.3
1.27
0.152
0.355
0.1
0
94 9152
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
95 10329
2.5
24
Fig. 4 - Board for RthJA Definition (in mm)
Rev. 2.0, 14-Jul-17
2
Document Number: 85567
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